发明授权
US07347979B2 Gas processing method and gas processing apparatus utilizing oxidation catalyst and low-temperature plasma
失效
采用氧化催化剂和低温等离子体的气体处理方法和气体处理装置
- 专利标题: Gas processing method and gas processing apparatus utilizing oxidation catalyst and low-temperature plasma
- 专利标题(中): 采用氧化催化剂和低温等离子体的气体处理方法和气体处理装置
-
申请号: US10560980申请日: 2004-03-30
-
公开(公告)号: US07347979B2公开(公告)日: 2008-03-25
- 发明人: Akemitsu Iida , Akira Mizuno
- 申请人: Akemitsu Iida , Akira Mizuno
- 申请人地址: JP Tokyo
- 专利权人: Nittetsu Mining Co., Ltd.
- 当前专利权人: Nittetsu Mining Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2003-172553 20030617
- 国际申请: PCT/JP2004/004521 WO 20040330
- 国际公布: WO2004/112940 WO 20041229
- 主分类号: A61L9/00
- IPC分类号: A61L9/00 ; A61L9/16 ; B01J19/08 ; H05H1/24
摘要:
A method for treating a gas characterized in that a low temperature plasma is generated in the presence of a metallic oxide oxidation catalyst, and an apparatus for treating a gas characterized by containing a low temperature plasma-generating unit carrying a metallic oxide oxidation catalyst are disclosed. According to the treating method and the treating apparatus, harmful components (such as carbon monoxide or a volatile organic compound) in a gas to be treated can be efficiently oxidized and rendered harmless, a foul odor may be rendered odorless, and further, microorganisms may be removed from and reduced in the treated gas.
公开/授权文献
信息查询