发明授权
- 专利标题： Method of growing non-polar a-plane gallium nitride
- 专利标题（中）： 生长非极性a面平面氮化镓的方法
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申请号： US11368184申请日： 2006-03-03
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公开(公告)号： US07348200B2公开(公告)日： 2008-03-25
- 发明人: Soo Min Lee , Rak Jun Choi , Naoi Yoshiki , Sakai Shiro , Masayoshi Koike
- 申请人： Soo Min Lee , Rak Jun Choi , Naoi Yoshiki , Sakai Shiro , Masayoshi Koike
- 申请人地址： KR Suwon, Kyungki-Do JP Tokushima
- 专利权人： Samsung Electro-Mechanics Co. Ltd.,The University of Tokushima
- 当前专利权人： Samsung Electro-Mechanics Co. Ltd.,The University of Tokushima
- 当前专利权人地址： KR Suwon, Kyungki-Do JP Tokushima
- 代理机构： Volpe and Koenig P.C.
- 优先权： KR10-2005-0025184 20050325
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.
公开/授权文献
- US20060216914A1 Method of growing non-polar a-plane gallium nitride 公开/授权日：2006-09-28