发明授权
- 专利标题: Techniques for forming interconnects
- 专利标题(中): 形成互连的技术
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申请号: US11625449申请日: 2007-01-22
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公开(公告)号: US07348270B1公开(公告)日: 2008-03-25
- 发明人: David H. Danovitch , Mukta G. Farooq , Peter A. Gruber , John U. Knickerbocker , George R. Proto , Da-Yuan Shih
- 申请人: David H. Danovitch , Mukta G. Farooq , Peter A. Gruber , John U. Knickerbocker , George R. Proto , Da-Yuan Shih
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ryan, Mason & Lewis, LLP
- 代理商 Daniel P. Morris, Esq.
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.
公开/授权文献
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