发明授权
US07348612B2 Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
有权
具有与衬底耦合的漏极的金属半导体场效应晶体管（MESFET）及其制造方法
- 专利标题： Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
- 专利标题（中）： 具有与衬底耦合的漏极的金属半导体场效应晶体管（MESFET）及其制造方法
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申请号： US10977054申请日： 2004-10-29
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公开(公告)号： US07348612B2公开(公告)日： 2008-03-25
- 发明人: Saptharishi Sriram , Scott Allen
- 申请人： Saptharishi Sriram , Scott Allen
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel Sibley & Sajovec
- 主分类号： H01L31/112
- IPC分类号： H01L31/112
摘要：
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a MESFET having a source region, a drain region and a gate contact. The gate contact is disposed between the source region and the drain region. The drain region is electrically coupled to the substrate through a contact via hole to the substrate. Related methods of fabricating MESFETs are also provided herein.
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