发明授权
- 专利标题: Transparent conductive film
- 专利标题(中): 透明导电膜
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申请号: US11141009申请日: 2005-06-01
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公开(公告)号: US07348649B2公开(公告)日: 2008-03-25
- 发明人: Tomotake Nashiki , Hideo Sugawara
- 申请人: Tomotake Nashiki , Hideo Sugawara
- 申请人地址: JP Ibaraki-shi, Osaka
- 专利权人: Nitto Denko Corporation
- 当前专利权人: Nitto Denko Corporation
- 当前专利权人地址: JP Ibaraki-shi, Osaka
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权: JPP.2004-165802 20040603; JPP.2005-031577 20050208
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; H01L31/00
摘要:
The present invention provides a transparent conductive film having: a transparent base film; a transparent SiOx thin film having a thickness of from 10 to 100 nm, a refractive index of from 1.40 to 1.80 and an average surface roughness Ra of from 0.8 to 3.0 nm, wherein x is from 1.0 to 2.0; and a transparent conductive thin film including an indium-tin complex oxide, which has a thickness of from 20 to 35 nm and a ratio of SnO2/(In2O3+SnO2) of from 3 to 15 wt %, wherein the transparent conductive thin film is disposed on one side of the transparent base film through the transparent SiOx thin film.
公开/授权文献
- US20050269707A1 Transparent conductive film 公开/授权日:2005-12-08
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