- 专利标题： Bulk-isolated PN diode and method of forming a bulk-isolated PN diode
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申请号： US10383893申请日： 2003-03-07
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公开(公告)号： US07348652B2公开(公告)日： 2008-03-25
- 发明人: Kurt D. Beigel
- 申请人： Kurt D. Beigel
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Fletcher Yoder PC
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; G11C7/10
摘要：
A technique for making a bulk isolated PN diode. Specifically, a technique is provided for making a voltage clamp with a pair of bulk isolated PN diode. Another embodiment provides for a voltage clamp with a pair of bulk isolated PN diodes in parallel with a pair of MOSFET diode-connected transistors. In addition, a method for manufacturing the bulk isolated PN diodes is recited.
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