Invention Grant
- Patent Title: Electromechanical memory cell with torsional movement
- Patent Title (中): 具有扭转运动的机电式记忆体
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Application No.: US11166297Application Date: 2005-06-24
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Publication No.: US07349236B2Publication Date: 2008-03-25
- Inventor: Pinyen Lin , Jingkuang Chen , Jun Ma
- Applicant: Pinyen Lin , Jingkuang Chen , Jun Ma
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, electrostatic, electromagnetic or thermal forces applied sequentially on the two cantilevers to change their relative position. The amount of power required to change the state of the cell is reduced by supporting at least one of the cantilevers with at least one lateral projection that is placed in torsion during cantilever displacement. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent, radiation or noise related data corruption unlikely.
Public/Granted literature
- US20070002604A1 Electromechanical memory cell with torsional movement Public/Granted day:2007-01-04
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