- 专利标题: Power voltage supplier of semiconductor memory device
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申请号: US11020244申请日: 2004-12-27
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公开(公告)号: US07349282B2公开(公告)日: 2008-03-25
- 发明人: Jun-Gi Choi , Yong-Kyu Kim
- 申请人: Jun-Gi Choi , Yong-Kyu Kim
- 申请人地址: KR Kyoungki-Do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Kyoungki-Do
- 代理机构: McDermott Will & Emery LLP
- 优先权: KR10-2004-0070846 20040906
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
The present invention provides a power voltage supplier for stably supplying a noise-free power voltage without increasing a size of a reservoir capacitor by employing a sharing scheme of the reservoir capacitor. The power voltage supplier of a semiconductor memory device includes: a first power voltage supply line for supplying a first power voltage; a second power voltage supply line for supplying a second power voltage; a first reservoir capacitor for supplying the first and the second power voltages stably; and a reservoir capacitor controller for selectively connecting the first reservoir capacitor to the first power voltage supply line or the second power voltage supply line.
公开/授权文献
- US20060050589A1 Power voltage supplier of semiconductor memory device 公开/授权日:2006-03-09
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