发明授权
- 专利标题： Methods for forming uniform lithographic features
- 专利标题（中）： 形成均匀光刻特征的方法
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申请号： US11335372申请日： 2006-01-19
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公开(公告)号： US07351648B2公开(公告)日： 2008-04-01
- 发明人: Toshiharu Furukawa , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung Hon Lam
- 申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Chung Hon Lam
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Keusey, Tutunjian & Bitetto, P.C.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/76
摘要：
Methods for fabricating a semiconductor device include forming a first layer on an underlying layer, forming a hardmask on the first layer, and patterning holes through the hardmask and first layer. An overhang is formed extending over sides of the holes. A conformal layer is deposited over the overhang and in the holes until the conformal layer closes off the holes to form a void/seam in each hole. The void/seam in each hole is exposed by etching back a top surface. The void/seam in each hole is extended to the underlying layer.
公开/授权文献
- US20070166981A1 Methods for forming uniform lithographic features 公开/授权日：2007-07-19