发明授权
- 专利标题： Nitride compound semiconductor light emitting device and method for producing the same
- 专利标题（中）： 氮化物半导体发光器件及其制造方法
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申请号： US11409101申请日： 2006-04-20
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公开(公告)号： US07352012B2公开(公告)日： 2008-04-01
- 发明人: Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
- 申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2000-005385 20000114
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.