发明授权
- 专利标题： Insulating layer having decreased dielectric constant and increased hardness
- 专利标题（中）： 绝缘层具有降低的介电常数和增加的硬度
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申请号： US10696254申请日： 2003-10-29
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公开(公告)号： US07352053B2公开(公告)日： 2008-04-01
- 发明人: Hui Lin Chang
- 申请人： Hui Lin Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes Boone, LLP
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
A method of manufacturing a mechanically robust insulating layer, including forming a low-k dielectric layer having a first dielectric constant on a substrate and forming a carbon nitride cap layer on the low-k dielectric layer, the insulating layer thereby having a second dielectric constant that is less than the first dielectric constant.