发明授权
US07352607B2 Non-volatile switching and memory devices using vertical nanotubes
有权
使用垂直纳米管的非易失性开关和存储器件
- 专利标题： Non-volatile switching and memory devices using vertical nanotubes
- 专利标题（中）： 使用垂直纳米管的非易失性开关和存储器件
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申请号： US11161183申请日： 2005-07-26
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公开(公告)号： US07352607B2公开(公告)日： 2008-04-01
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olsen & Watts
- 代理商 William D. Sabo
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Methods of sensing the state of the devices include measuring capacitance, and tunneling and field emission currents.