发明授权
- 专利标题： Exposure mask, optical proximity correction device, optical proximity correction method, manufacturing method of semiconductor device, and optical proximity correction program
- 专利标题（中）： 曝光掩模，光学邻近校正装置，光学邻近校正方法，半导体器件的制造方法和光学邻近校正程序
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申请号： US10846837申请日： 2004-05-14
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公开(公告)号： US07353493B2公开(公告)日： 2008-04-01
- 发明人: Hisashi Akiyama
- 申请人： Hisashi Akiyama
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2003-136914 20030515
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
An optical proximity correction is provided that generates a corrected pattern P0 corresponding to a state M0 where the focus is in focus and the exposure dose is optimal, a corrected pattern P1 corresponding to a state M1 where the focus is in focus and the exposure dose is at the lower limit, a corrected pattern P2 corresponding to a state M2 where the focus is in focus and the exposure dose is at the upper limit, a corrected pattern P3 corresponding to a state M3 where the focus deviates to the lower side and the exposure dose is optimal, and a corrected pattern P4 corresponding to a state M4 where the focus deviates to the upper side and the exposure dose is optimal. By combining these corrected patterns P0 through P4, a composed pattern P5 is generated that reflects the scattering of the exposure dose and the deviation of the focus.
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