发明授权
- 专利标题: Chemical mechanical polishing pad and chemical mechanical polishing process
- 专利标题(中): 化学机械抛光垫和化学机械抛光工艺
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申请号: US11219843申请日: 2005-09-07
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公开(公告)号: US07354527B2公开(公告)日: 2008-04-08
- 发明人: Hiroyuki Tano , Hideki Nishimura , Hiroshi Shiho
- 申请人: Hiroyuki Tano , Hideki Nishimura , Hiroshi Shiho
- 申请人地址: JP Tokyo
- 专利权人: JSR Corporation
- 当前专利权人: JSR Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2004-271677 20040917
- 主分类号: B44C1/22
- IPC分类号: B44C1/22
摘要:
A chemical mechanical polishing pad which has a storage elastic modulus E′(30° C.) at 30° C. of 120 MPa or less and an (E′(30° C.)/E′(60° C.)) ratio of the storage elastic modulus E′(30° C.) at 30° C. to the storage elastic modulus E′(60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.