发明授权
US07354814B2 Semiconductor process with first transistor types oriented in a first plane and second transistor types oriented in a second plane
有权
在第一平面中定向的第一晶体管类型的半导体工艺和在第二平面中定向的第二晶体管类型
- 专利标题： Semiconductor process with first transistor types oriented in a first plane and second transistor types oriented in a second plane
- 专利标题（中）： 在第一平面中定向的第一晶体管类型的半导体工艺和在第二平面中定向的第二晶体管类型
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申请号： US10949057申请日： 2004-09-23
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公开(公告)号： US07354814B2公开(公告)日： 2008-04-08
- 发明人: Marius K. Orlowski , Bich-Yen Nguyen
- 申请人： Marius K. Orlowski , Bich-Yen Nguyen
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336
摘要：
A semiconductor fabrication process includes forming a recess in a semiconductor substrate. A silicon germanium film is formed on a sidewall of the recess. A gate dielectric and gate electrode are formed adjacent the silicon germanium film. Source/drain regions are then formed wherein a first source/drain region is adjacent a first side of the gate electrode in an upper surface of the substrate and a second source/drain region adjacent a second side of the gate electrode is below a lower surface of the recess. Etching the exposed portion of the substrate may be done so as to form a rounded corner at the junction of the recess sidewall and the recess lower surface. The silicon germanium film formation is preferably epitaxial. An epitaxial silicon film may be formed adjacent the silicon germanium film.
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