发明授权
- 专利标题: Integrated passive devices with high Q inductors
- 专利标题(中): 集成无源器件,具有高Q电感
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申请号: US11520254申请日: 2006-09-13
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公开(公告)号: US07355264B2公开(公告)日: 2008-04-08
- 发明人: Yinon Degani , Yinchao Chen , Yu Fan , Charley Chunlei Gao , Kunquan Sun , Liquo Sun
- 申请人: Yinon Degani , Yinchao Chen , Yu Fan , Charley Chunlei Gao , Kunquan Sun , Liquo Sun
- 申请人地址: US TX Plano
- 专利权人: Sychip Inc.
- 当前专利权人: Sychip Inc.
- 当前专利权人地址: US TX Plano
- 代理商 Peter V. D. Wilde
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.
公开/授权文献
- US20080061420A1 INTEGRATED PASSIVE DEVICES WITH HIGH Q INDUCTORS 公开/授权日:2008-03-13
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