发明授权
- 专利标题： Semiconductor device and method for fabricating same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11250439申请日： 2005-10-17
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公开(公告)号： US07358198B2公开(公告)日： 2008-04-15
- 发明人: Nobutoshi Aoki , Koichi Kato , Katsuyuki Sekine , Ichiro Mizushima
- 申请人： Nobutoshi Aoki , Koichi Kato , Katsuyuki Sekine , Ichiro Mizushima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-063117 20020308
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method is provided with: arranging nitrogen atoms on a surface of a silicon substrate; performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; and forming a silicon oxide film on the silicon substrate with the three-coordinate bond state of nitrogen atoms and the silicon atoms being maintained.
公开/授权文献
- US20060105582A1 Semiconductor device and method for fabricating same 公开/授权日：2006-05-18
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