发明授权
US07358612B2 Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
有权
在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻
- 专利标题： Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
- 专利标题（中）： 在薄膜层进行等离子体处理以降低薄层电阻并改善通孔接触电阻
-
申请号： US11419537申请日： 2006-05-22
-
公开(公告)号： US07358612B2公开(公告)日： 2008-04-15
- 发明人: Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
- 申请人： Jian-Shin Tsai , Yu-Hua Chou , Tzo-Hung Luo , Chi-Chan Tseng , Wei Zhang , Jong-Chen Yang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes Boone, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
公开/授权文献
信息查询
IPC分类:
