发明授权
- 专利标题: Raman signal-enhancing structures and devices
- 专利标题(中): 拉曼信号增强结构和器件
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申请号: US11413910申请日: 2006-04-28
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公开(公告)号: US07359048B2公开(公告)日: 2008-04-15
- 发明人: Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
- 申请人: Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 主分类号: G01J3/44
- IPC分类号: G01J3/44 ; G01N21/65
摘要:
Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
公开/授权文献
- US20070252982A1 Raman signal-enhancing structures and devices 公开/授权日:2007-11-01
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