Invention Grant
- Patent Title: Raman signal-enhancing structures and devices
- Patent Title (中): 拉曼信号增强结构和器件
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Application No.: US11413910Application Date: 2006-04-28
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Publication No.: US07359048B2Publication Date: 2008-04-15
- Inventor: Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
- Applicant: Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G01J3/44
- IPC: G01J3/44 ; G01N21/65

Abstract:
Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
Public/Granted literature
- US20070252982A1 Raman signal-enhancing structures and devices Public/Granted day:2007-11-01
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