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发明授权
US07361554B2 Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device 失效
多位非易失性存储器件，其操作方法以及制造多位非易失性存储器件的方法

Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
摘要：
Disclosed are a multi-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the multi-bit non-volatile memory device may be formed on a semiconductor substrate may include: a plurality of channels disposed perpendicularly to the upper surface of the semiconductor substrate; a plurality of storage nodes disposed on opposite sides of the channels perpendicularly the upper surface of the semiconductor substrate; a control gate surrounding upper portions of the channels and the storage nodes, and side surfaces of the storage nodes; and an insulating film formed between the channels and the storage nodes, between the channels and the control gate, and between the storage nodes and the control gate.
摘要（中）：

公开了一种多位非易失性存储器件，其操作方法以及制造该多位非易失性存储器件的方法。 多位非易失性存储器件的单元可以形成在半导体衬底上，可以包括：垂直于半导体衬底的上表面设置的多个沟道; 多个存储节点，其设置在所述通道的相对侧，垂直于所述半导体衬底的上表面; 围绕通道和存储节点的上部以及存储节点的侧表面的控制门; 以及形成在通道和存储节点之间，通道和控制栅极之间以及存储节点和控制门之间的绝缘膜。

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