发明授权
- 专利标题： Integrated circuit and method
- 专利标题（中）： 集成电路及方法
-
申请号： US11145663申请日： 2005-06-06
-
公开(公告)号： US07361599B2公开(公告)日： 2008-04-22
- 发明人: Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
- 申请人： Theodore S. Moise , Guoqiang Xing , Mark Visokay , Justin F. Gaynor , Stephen R. Gilbert , Francis Celii , Scott R. Summerfelt , Luigi Colombo
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren L. Franz; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.
公开/授权文献
- US20050227378A1 Integrated circuit and method 公开/授权日：2005-10-13
信息查询
IPC分类:
