- 专利标题: Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode
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申请号: US10952760申请日: 2004-09-30
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公开(公告)号: US07362789B2公开(公告)日: 2008-04-22
- 发明人: Hisashi Ohtsuka , Yoji Okazaki , Takayuki Katoh
- 申请人: Hisashi Ohtsuka , Yoji Okazaki , Takayuki Katoh
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2001/144466 20010515; JP2001/153578 20010523; JP2001/157139 20010525
- 主分类号: H01S3/094
- IPC分类号: H01S3/094
摘要:
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
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