发明授权
- 专利标题: Buffer-layer treatment of MOCVD-grown nitride structures
- 专利标题(中): MOCVD生长氮化物结构的缓冲层处理
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申请号: US11414012申请日: 2006-04-27
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公开(公告)号: US07364991B2公开(公告)日: 2008-04-29
- 发明人: David Bour , Jacob Smith , Sandeep Nijhawan
- 申请人: David Bour , Jacob Smith , Sandeep Nijhawan
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Townsend and Townsend and Crew
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L21/36 ; H01L31/20
摘要:
Methods are disclosed for fabricating a compound nitride semiconductor structure. An amorphous buffer layer that includes nitrogen and a group-III element is formed over a substrate disposed within a substrate processing chamber at a first temperature. The temperature within the chamber is increased to a second temperature at which the amorphous buffer layer coalesces into crystallites over the substrate. The substrate is exposed to a corrosive agent to destroy at least some of the crystallites. A crystalline nitride layer is formed over the substrate at a third temperature using the crystallites remaining after exposure to the corrosive agent as seed crystals. The third temperature is greater than the first temperature. The crystalline nitride layer also includes nitrogen and a group-III element.
公开/授权文献
- US20070254458A1 Buffer-layer treatment of MOCVD-grown nitride structures 公开/授权日:2007-11-01