Invention Grant
- Patent Title: Device for producing high frequency microwaves
- Patent Title (中): 用于生产高频微波的装置
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Application No.: US10469728Application Date: 2002-03-04
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Publication No.: US07365493B2Publication Date: 2008-04-29
- Inventor: Chun Sik Lee , Hyeck-Hee Lee , Min-Suk Lee
- Applicant: Chun Sik Lee , Hyeck-Hee Lee , Min-Suk Lee
- Applicant Address: DE Saarbruecken
- Assignee: Kist Europe Korea Institute of Science and Technology Europe Forschungsgesellschaft mbH
- Current Assignee: Kist Europe Korea Institute of Science and Technology Europe Forschungsgesellschaft mbH
- Current Assignee Address: DE Saarbruecken
- Agency: Marshall & Melhorn, LLC
- Priority: DE10111817 20010302
- International Application: PCT/EP02/02332 WO 20020304
- International Announcement: WO02/071435 WO 20020912
- Main IPC: H01J25/00
- IPC: H01J25/00

Abstract:
A device is proposed for producing high-frequency microwaves, having a cathode arrangement with heatable cathodes for emitting electrons, two grating arrangements for controlling and focusing the electrons flow and an anode for recaiving the electrons passing through the grating arrangements. The cathode arrangement and the first grating arrangement and also a blocking or choke element define an output cavity forming a resonance cavity and the anode and the second grating arrangement define an output cavity likeeise forming a resonance cavity. The cathode arrangement has a monuting for the cathode such that deformation of the cathode with reduction of the spacing between the heatable cathode and grating is avoided.
Public/Granted literature
- US20040118840A1 Device for producing high frequency microwaves Public/Granted day:2004-06-24
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