发明授权
US07368330B2 Semiconductor device having fuse circuit on cell region and method of fabricating the same
有权
在单元区域具有熔丝电路的半导体器件及其制造方法
- 专利标题： Semiconductor device having fuse circuit on cell region and method of fabricating the same
- 专利标题（中）： 在单元区域具有熔丝电路的半导体器件及其制造方法
-
申请号： US10971374申请日： 2004-10-22
-
公开(公告)号： US07368330B2公开(公告)日： 2008-05-06
- 发明人: Young-Hee Song , Ill-Heung Choi , Min-Young Son , Min-Sang Park
- 申请人： Young-Hee Song , Ill-Heung Choi , Min-Young Son , Min-Sang Park
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR2001-68159 20011102
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
A semiconductor device, capable of improving integration density and solving problems that may occur in a laser repair process, and a method of fabricating the same are provided. A fuse circuit is formed in a cell region, not in a peripheral region, and thus it is possible to reduce the size of a semiconductor chip.
公开/授权文献
信息查询
IPC分类:
