Invention Grant
- Patent Title: Ion beam measuring method and ion implanting apparatus
- Patent Title (中): 离子束测量方法和离子注入装置
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Application No.: US10574281Application Date: 2004-12-28
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Publication No.: US07368734B2Publication Date: 2008-05-06
- Inventor: Sei Umisedo , Nariaki Hamamoto
- Applicant: Sei Umisedo , Nariaki Hamamoto
- Applicant Address: JP Kyoto
- Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2004-001006 20040106
- International Application: PCT/JP2004/019833 WO 20041228
- International Announcement: WO2005/066658 WO 20050721
- Main IPC: H01J3/10
- IPC: H01J3/10

Abstract:
A beam current density distribution in y direction of an ion beam 4 at a position of a forestage beam restricting shutter 32 is measured by measuring a change in a beam current of the ion beam 4 incident on a forestage multipoint Faraday 24 by passing an outer side of a side 34 of the shutter 32 while driving the forestage beam restricting shutter 32 in y direction by a forestage shutter driving apparatus 36. Further, a beam current density distribution in y direction of the ion beam 4 at a position of a poststage beam restricting shutter 42 is measured by measuring a change in the beam current of the ion beam 4 incident on a poststage multipoints Faraday 28 by passing an outer side of a side 44 of the shutter 42 while driving the poststage beam restricting shutter 42 in y direction by a poststage shutter driving apparatus 46. Further, at least one of an angle deviation, a diverging angle and abeam side in y direction of the ion beam 4 is measured by using a result of the measurement.
Public/Granted literature
- US20070023674A1 Ion beam measuring method and ion implanting apparatus Public/Granted day:2007-02-01
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