发明授权
- 专利标题: Semiconductor light-emitting device
- 专利标题(中): 半导体发光装置
-
申请号: US11485420申请日: 2006-07-13
-
公开(公告)号: US07368759B2公开(公告)日: 2008-05-06
- 发明人: Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
- 申请人: Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Cable, Ltd.
- 当前专利权人: Hitachi Cable, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP2005-285921 20050930; JP2005-285931 20050930
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.
公开/授权文献
- US20070075327A1 Semiconductor light-emitting device 公开/授权日:2007-04-05