发明授权
- 专利标题: Level shift circuit and semiconductor device
- 专利标题(中): 电平移位电路和半导体器件
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申请号: US11114093申请日: 2005-04-26
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公开(公告)号: US07368969B2公开(公告)日: 2008-05-06
- 发明人: Hisao Suzuki , Katuyuki Yasukouchi
- 申请人: Hisao Suzuki , Katuyuki Yasukouchi
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Arent Fox LLP
- 优先权: JP2000-323924 20001024; JP2000-390553 20001222
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
A level shift circuit including a capacitor, a charge control circuit, and a limiting circuit. The charge control circuit is connected to the capacitor to provide the voltage of a high potential power supply to the capacitor and to control the charging of the capacitor. The limiting circuit is connected to the high potential power supply and the charge control circuit to limit the voltage provided to the capacitor from the high potential power supply before the charge control circuit stops providing the voltage of the high potential power supply to the capacitor.
公开/授权文献
- US20050195676A1 Level shift circuit and semiconductor device 公开/授权日:2005-09-08
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