Invention Grant
US07369595B2 Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode
有权
垂直腔表面发射激光器（VCSEL）二极管中的分布式布拉格反射器（DBR）结构及其制造方法以及VCSEL二极管
- Patent Title: Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode
- Patent Title (中): 垂直腔表面发射激光器（VCSEL）二极管中的分布式布拉格反射器（DBR）结构及其制造方法以及VCSEL二极管
-
Application No.: US11544832Application Date: 2006-10-05
-
Publication No.: US07369595B2Publication Date: 2008-05-06
- Inventor: Ki Soo Kim , Won Seok Han , Sung Bock Kim , Dae Kon Oh
- Applicant: Ki Soo Kim , Won Seok Han , Sung Bock Kim , Dae Kon Oh
- Applicant Address: KR Deejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Deejeon
- Agency: Ladas & Parry LLP
- Priority: KR10-2005-0118196 20051206; KR10-2006-0049238 20060601
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/08
Abstract:
A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
Public/Granted literature
Information query
