Invention Grant
US07370237B2 Semiconductor memory device capable of accessing all memory cells
失效
能够访问所有存储单元的半导体存储器件
- Patent Title: Semiconductor memory device capable of accessing all memory cells
- Patent Title (中): 能够访问所有存储单元的半导体存储器件
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Application No.: US10779160Application Date: 2004-02-12
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Publication No.: US07370237B2Publication Date: 2008-05-06
- Inventor: Hong-Beom Kim , Kyu-Young Nam , Hee-Jun Lee
- Applicant: Hong-Beom Kim , Kyu-Young Nam , Hee-Jun Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR10-2003-0022844 20030411
- Main IPC: G06F11/00
- IPC: G06F11/00
Abstract:
A semiconductor memory device according to embodiments of the invention includes N channels for interface with an outside. During a test mode where the semiconductor memory device is tested by a tester having M channels, K ones of the N channels of the memory device are connected to the M channels of the tester, N being more than M and M being equal to or more than R*K (where R is an integer).
Public/Granted literature
- US20040216006A1 Semiconductor memory device capable of accessing all memory cells Public/Granted day:2004-10-28
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