发明授权
- 专利标题： Target for transparent conductive thin film, transparent conductive thin film and manufacturing method thereof, electrode material for display, organic electroluminescence element and solar cell
- 专利标题（中）： 透明导电薄膜的靶，透明导电薄膜及其制造方法，显示用电极材料，有机电致发光元件和太阳能电池
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申请号： US10445708申请日： 2003-05-27
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公开(公告)号： US07371475B2公开(公告)日： 2008-05-13
- 发明人: Yoshiyuki Abe
- 申请人： Yoshiyuki Abe
- 申请人地址： JP Tokyo
- 专利权人： Sumitomo Metal Mining Co., Ltd.
- 当前专利权人： Sumitomo Metal Mining Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Katten Muchin Rosenman LLP
- 优先权： JP2002-157568 20020530; JP2002-330058 20021113
- 主分类号： B32B33/00
- IPC分类号： B32B33/00 ; H01B1/08
摘要：
The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating or sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470, whereby a transparent conductive thin film having excellent surface smoothness and low specific resistance of 6.0×10−4 Ω·cm or less, and whose surface smoothness and specific resistance properties do not change even when heated at 170° C. is provided.
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