Invention Grant
- Patent Title: Trench isolation structure and a method of manufacture therefor
- Patent Title (中): 沟槽隔离结构及其制造方法
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Application No.: US10870020Application Date: 2004-06-17
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Publication No.: US07371658B2Publication Date: 2008-05-13
- Inventor: Rick L. Wise , Mark S. Rodder
- Applicant: Rick L. Wise , Mark S. Rodder
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J. Brady III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/44 ; H01L21/4763
Abstract:
The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure (130), in one embodiment, includes a trench located within a substrate (110), the trench having a buffer layer (133) located on sidewalls thereof. The trench isolation structure (130) further includes a barrier layer (135) located over the buffer layer (133), and fill material (138) located over the barrier layer (135) and substantially filling the trench.
Public/Granted literature
- US20050282353A1 Trench isolation structure and a method of manufacture therefor Public/Granted day:2005-12-22
Information query
IPC分类:
