发明授权
US07371678B2 Semiconductor device with a metal line and method of forming the same
失效
具有金属线的半导体器件及其形成方法
- 专利标题: Semiconductor device with a metal line and method of forming the same
- 专利标题(中): 具有金属线的半导体器件及其形成方法
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申请号: US11320587申请日: 2005-12-30
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公开(公告)号: US07371678B2公开(公告)日: 2008-05-13
- 发明人: June-Woo Lee
- 申请人: June-Woo Lee
- 申请人地址: KR Seoul
- 专利权人: Dongbu Electronics Co., Ltd.
- 当前专利权人: Dongbu Electronics Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: Lowe Hauptman Ham & Berner LLP
- 优先权: KR10-2004-0117417 20041230
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L23/48
摘要:
A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.