Invention Grant
US07372348B2 Stressed material and shape memory material MEMS devices and methods for manufacturing
有权
强调材料和形状记忆材料MEMS器件和制造方法
- Patent Title: Stressed material and shape memory material MEMS devices and methods for manufacturing
- Patent Title (中): 强调材料和形状记忆材料MEMS器件和制造方法
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Application No.: US10923277Application Date: 2004-08-20
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Publication No.: US07372348B2Publication Date: 2008-05-13
- Inventor: Baomin Xu , David Kirtland Fork , Michael Yu Tak Young , Eugene Michael Chow
- Applicant: Baomin Xu , David Kirtland Fork , Michael Yu Tak Young , Eugene Michael Chow
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Fay Sharpe LLP
- Main IPC: H01H51/22
- IPC: H01H51/22
Abstract:
Disclosed is a MEMS device which comprises at least one shape memory material such as a shape memory alloy (SMA) layer and at least one stressed material layer. Examples of such MEMS devices include an actuator, a micropump, a microvalve, or a non-destructive fuse-type connection probe. The device exhibits a variety of improved properties, for example, large deformation ability and high energy density. Also provided is a method of easily fabricating the MEMS device in the form of a cantilever-type or diaphragm-type structure.
Public/Granted literature
- US20060038643A1 Stressed material and shape memory material MEMS devices and methods for manufacturing Public/Granted day:2006-02-23
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