Invention Grant
- Patent Title: Group III nitride semiconductor substrate
- Patent Title (中): III族氮化物半导体衬底
-
Application No.: US11355985Application Date: 2006-02-17
-
Publication No.: US07374618B2Publication Date: 2008-05-20
- Inventor: Takehiro Yoshida
- Applicant: Takehiro Yoshida
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly, Stanger, Malur & Brundidge, P.C.
- Priority: JP2005-325162 20051109
- Main IPC: C30B29/38
- IPC: C30B29/38 ; H01L29/06
Abstract:
A GaN substrate 1, a group III nitride semiconductor substrate, is provided with an OF portion 2 for the periphery thereof. The bevel 7 on the periphery of the nitric polarity face 5 side of the GaN substrate 1 is provided throughout the entire periphery of the GaN substrate 1 including the OF portion 2, wherein the beveling angle θ2 of the bevel 7 is given a value in the range over 30° to 60° inclusive.
Public/Granted literature
- US20070105258A1 Group III nitride semiconductor substrate Public/Granted day:2007-05-10
Information query
IPC分类:
