发明授权
- 专利标题: Surface passivated photovoltaic devices
- 专利标题(中): 表面钝化光伏器件
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申请号: US11127648申请日: 2005-05-12
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公开(公告)号: US07375378B2公开(公告)日: 2008-05-20
- 发明人: Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
- 申请人: Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
- 申请人地址: US NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: US NY Schenectady
- 代理机构: Fletcher Yoder
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01L31/12 ; H01L33/00
摘要:
A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.
公开/授权文献
- US20060255340A1 Surface passivated photovoltaic devices 公开/授权日:2006-11-16