发明授权
US07375410B2 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
有权
具有用于低衬底偏置操作的薄埋氧化物（BOX）上的反向集电极的超薄SOI垂直双极晶体管及其方法
- 专利标题： Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
- 专利标题（中）： 具有用于低衬底偏置操作的薄埋氧化物（BOX）上的反向集电极的超薄SOI垂直双极晶体管及其方法
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申请号： US10787002申请日： 2004-02-25
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公开(公告)号： US07375410B2公开(公告)日： 2008-05-20
- 发明人: Herbert L. Ho , Mahender Kumar , Qiqing Ouyang , Paul A. Papworth , Christopher D. Sheraw , Michael D. Steigerwalt
- 申请人： Herbert L. Ho , Mahender Kumar , Qiqing Ouyang , Paul A. Papworth , Christopher D. Sheraw , Michael D. Steigerwalt
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Ido Tuchman, Esq.
- 主分类号： H01L27/102
- IPC分类号： H01L27/102
摘要：
The present invention provides a “collector-less” silicon-on-insulator (SOI) bipolar junction transistor (BJT) that has no impurity-doped collector. Instead, the inventive vertical SOI BJT uses a back gate-induced, minority carrier inversion layer as the intrinsic collector when it operates. In accordance with the present invention, the SOI substrate is biased such that an inversion layer is formed at the bottom of the base region serving as the collector. The advantage of such a device is its CMOS-like process. Therefore, the integration scheme can be simplified and the manufacturing cost can be significantly reduced. The present invention also provides a method of fabricating BJTs on selected areas of a very thin BOX using a conventional SOI starting wafer with a thick BOX. The reduced BOX thickness underneath the bipolar devices allows for a significantly reduced substrate bias compatible with the CMOS to be applied while maintaining the advantages of a thick BOX underneath the CMOS.