发明授权
- 专利标题： Topography compensation of imprint lithography patterning
- 专利标题（中）： 压印光刻图案的地形补偿
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申请号： US10874499申请日： 2004-06-23
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公开(公告)号： US07376259B1公开(公告)日： 2008-05-20
- 发明人: Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
- 申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Amin, Turocy & Calvin, LLP
- 主分类号： G06K9/00
- IPC分类号： G06K9/00
摘要：
The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that modify an imprint mask. An aspect of the invention generates feedback information that facilitates control of imprint mask feature height via employing a scatterometry system to detect topography variation and, decreasing imprint mask feature height in order to compensate for topography variation.
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