发明授权
- 专利标题: Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method
- 专利标题(中): 层叠基板,基板的制造方法以及用于该方法的晶片外周加压夹具
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申请号: US10499028申请日: 2003-05-02
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公开(公告)号: US07378332B2公开(公告)日: 2008-05-27
- 发明人: Shinichi Tomita , Kouji Yoshimaru
- 申请人: Shinichi Tomita , Kouji Yoshimaru
- 申请人地址: JP Tokyo
- 专利权人: Sumitomo Mitsubishi Silicon Corporation
- 当前专利权人: Sumitomo Mitsubishi Silicon Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Kubovcik & Kubovcik
- 优先权: JP2002-145327 20020520
- 国际申请: PCT/JP03/05652 WO 20030502
- 国际公布: WO03/098695 WO 20031127
- 主分类号: H01L21/30
- IPC分类号: H01L21/30
摘要:
Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grinding, a periphery removing polishing is applied from an active layer wafer side of a bonding wafer so that a peripheral region of the active layer may be removed and a central region thereof may be left un-removed. Consequently, a periphery grinding and a periphery etching according to the prior art can be eliminated. Furthermore, an etch pit on a circumferential face of a wafer which could be caused by the periphery etching and a contamination or a scratching in an SOI layer which could be caused by a silicon oxide film left un-ground-off can be prevented, thereby achieving high yield and low cost.