发明授权
- 专利标题: Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
- 专利标题(中): 化学机械抛光水性分散体和化学机械抛光方法
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申请号: US11102639申请日: 2005-04-11
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公开(公告)号: US07378349B2公开(公告)日: 2008-05-27
- 发明人: Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
- 申请人: Tomohisa Konno , Hirotaka Shida , Kiyonobu Kubota , Masayuki Hattori , Nobuo Kawahashi
- 申请人地址: JP Tokyo
- 专利权人: JSR Corporation
- 当前专利权人: JSR Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2004-116307 20040412; JP2004-116308 20040412
- 主分类号: H01L21/461
- IPC分类号: H01L21/461
摘要:
Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.