发明授权
- 专利标题: Method and apparatus for implementing high speed memory
- 专利标题(中): 实现高速存储器的方法和装置
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申请号: US11692108申请日: 2007-03-27
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公开(公告)号: US07379363B2公开(公告)日: 2008-05-27
- 发明人: Chang-Ting Chen
- 申请人: Chang-Ting Chen
- 申请人地址: TW Hsinchu
- 专利权人: Macronix International Co., Ltd.
- 当前专利权人: Macronix International Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Haynes Beffel & Wolfeld LLP
- 代理商 Kenta Suzue
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
Various methods and apparatuses permit high speed reads of memory. Portions of data are copied and stored on other word lines. By reading a copy of data that is stored on memory cells accessed by a word line that is already precharged, a latency specification can be met which does not allow time for precharging a second word line.
公开/授权文献
- US20070189089A1 Method and Apparatus for Implementing High Speed Memory 公开/授权日:2007-08-16
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