发明授权
- 专利标题: Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the same
- 专利标题(中): 具有覆盖键和对准键的集成电路半导体器件及其制造方法
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申请号: US10867468申请日: 2004-06-14
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公开(公告)号: US07381508B2公开(公告)日: 2008-06-03
- 发明人: Chang-Jin Kang , Myeong-Cheol Kim , Man-Hyoung Ryoo , Si-Hyeung Lee , Doo-Youl Lee
- 申请人: Chang-Jin Kang , Myeong-Cheol Kim , Man-Hyoung Ryoo , Si-Hyeung Lee , Doo-Youl Lee
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics, Co. Ltd.
- 当前专利权人: Samsung Electronics, Co. Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC.
- 优先权: KR10-2003-0038321 20030613
- 主分类号: G03F9/00
- IPC分类号: G03F9/00 ; G03F7/20
摘要:
An integrated circuit semiconductor device including a cell region formed in a first portion of a silicon substrate, the cell region including a first trench formed in the silicon substrate, a first buried insulating layer filled in the first trench, a first insulating pattern formed over the silicon substrate, and a first conductive pattern formed over the first insulating pattern. An overlay key region is formed in a second portion of the silicon substrate and includes a second trench formed in the silicon substrate, a second insulating pattern formed over the silicon substrate and used as an overlay key, and a second conductive pattern formed over the second insulating pattern and formed by correcting overlay and alignment errors using the second insulating pattern. An alignment key region is formed in a third portion of the silicon substrate and includes a third trench formed in the silicon substrate and used as an alignment key, a second buried insulating layer formed in the third trench, and a third conductive pattern formed over the second buried insulating layer and the third trench.