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发明授权
US07381586B2 Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution 有权
制造薄膜晶体管的方法，其包括从溶液中选择性地形成有源沟道层

Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution
摘要：
A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a gate electrode, a gate insulator, an active channel layer, a drain electrode, and a source electrode on a substrate. It emphasizes the use of metal oxides or II-VI compound semiconductors and low-temperature CBD process to form the active channel layer. In a CBD process, the active channel layers are selectively deposited on the substrates immersed in the solution through controlling solution temperature and PH value. The invention offers the advantages of low deposition temperature, selective deposition, no practical limit of panel size, and low fabrication cost. Its low deposition temperature allows the use of flexible substrates, such as plastic substrates.
摘要（中）：

提供了制造TFT的方法。 它可以应用于反向交错和共平面的TFT结构。 交错TFT的制造方法包括在基板上形成栅极，栅极绝缘体，有源沟道层，漏极和源电极。 它强调使用金属氧化物或II-VI化合物半导体和低温CBD工艺来形成有源沟道层。 在CBD工艺中，通过控制溶液温度和PH值，将有源沟道层选择性地沉积在浸在溶液中的衬底上。 本发明提供了低沉积温度，选择性沉积，面板尺寸的实际限制和低制造成本的优点。 其低沉积温度允许使用柔性基底，例如塑料基底。

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