发明授权
- 专利标题： Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness
- 专利标题（中）： 用于铜金属化层的介电阻挡层，沿其厚度具有不同的硅浓度
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申请号： US10717122申请日： 2003-11-19
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公开(公告)号： US07381660B2公开(公告)日： 2008-06-03
- 发明人: Larry Zhao , Jeremy Martin , Hartmut Ruelke
- 申请人： Larry Zhao , Jeremy Martin , Hartmut Ruelke
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE10303925 20030131
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/31
摘要：
A silicon nitride layer having a silicon-rich sub-layer and a standard sub-layer is formed on a copper surface to obtain excellent electromigration characteristics due to the standard sub-layer that is in contact with the copper, while maintaining a superior diffusion barrier behavior due to the silicon-rich sub-layer. By combining these sub-layers, the overall thickness of the silicon nitride layer may be kept small compared to conventional silicon nitride barrier layers, thereby reducing the capacitive coupling of adjacent copper lines.
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