Invention Grant
US07382008B2 Ultra-small CMOS image sensor pixel using a photodiode potential technique
有权
超小型CMOS图像传感器像素采用光电二极管技术
- Patent Title: Ultra-small CMOS image sensor pixel using a photodiode potential technique
- Patent Title (中): 超小型CMOS图像传感器像素采用光电二极管技术
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Application No.: US11416055Application Date: 2006-05-02
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Publication No.: US07382008B2Publication Date: 2008-06-03
- Inventor: Weize Xu
- Applicant: Weize Xu
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent Peyton C. Watkins
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring all or a portion of the charge from the photosensitive region; a voltage supply having an increasing voltage over time that is applied to the transfer gate; a floating diffusion for receiving the all or a portion of the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a pulse detector for detecting a voltage pulse from the amplifier; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the detector which indicates initiation of charge transfer from the photosensitive region to the floating diffusion.
Public/Granted literature
- US20070257284A1 An ultra-small CMOS image sensor pixel using a photodiode potential technique Public/Granted day:2007-11-08
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