发明授权
- 专利标题： Integrated metal shield for a field effect transistor
- 专利标题（中）： 用于场效应晶体管的集成金属屏蔽
-
申请号： US11459829申请日： 2006-07-25
-
公开(公告)号： US07382030B1公开(公告)日： 2008-06-03
- 发明人: Tony Ivanov , Michael Carroll , Triet Dinh , Julio Costa
- 申请人： Tony Ivanov , Michael Carroll , Triet Dinh , Julio Costa
- 申请人地址： US NC Greensboro
- 专利权人： RF Micro Devices, Inc.
- 当前专利权人： RF Micro Devices, Inc.
- 当前专利权人地址： US NC Greensboro
- 代理机构： Withrow & Terranova, PLLC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The present invention relates to a semiconductor device having an integrated metal shield. The shield, created as part of a MOSFET, is formed about a gate electrode of the MOSFET to effectively reduce drain-to-gate capacitance and increase breakdown voltage. The shield consists of a metallic shield contact via and a source contact extension. The metallic shield contact via, formed between the gate electrode and a drain region of the MOSFET, may be either a series of closely spaced vias or a wide continuous via. The metallic shield contact via is isolated from the surface of a semiconductor wafer by a shield isolation layer at one end. The metallic shield contact via is electrically coupled to the source contact extension at the other end. The source contact extension is metallic, and may be formed from the same metal used to create a source contact and a drain contact for the MOSFET.
信息查询
IPC分类:
