发明授权
- 专利标题： Edge seal for improving integrated circuit noise isolation
- 专利标题（中）： 边缘密封，用于改善集成电路噪声隔离
-
申请号： US11349608申请日： 2006-02-08
-
公开(公告)号： US07382039B2公开(公告)日： 2008-06-03
- 发明人: Neal W. Hollenbeck , Kenneth R. Haddad , William J. Roeckner
- 申请人： Neal W. Hollenbeck , Kenneth R. Haddad , William J. Roeckner
- 申请人地址： US TX Austin US IL Schaumburg
- 专利权人： Freescale Semiconductor, Inc.,Motorola, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.,Motorola, Inc.
- 当前专利权人地址： US TX Austin US IL Schaumburg
- 代理机构： Brinks Hofer Gilson & Lione
- 主分类号： H01L21/50
- IPC分类号： H01L21/50
摘要：
An edge seal structure and fabrication method are described. The edge seal structure includes a high impedance substrate containing a base material and a grounded floating edge seal that is on the substrate but is isolated from the base material. The edge seal contacts a first doped well in the substrate that has the same conductivity type as and is more heavily doped than the base material. The first doped well is in a second doped well that has a different conductivity type than the first doped well. The first and second doped wells and the base material form back-to-back series connected diodes. The wells are effectively connected to power and ground such that the diodes are reverse-biased. The edge seal is formed by a stack of conductive layers, at least some of which are surrounded by a stack of insulating layers.
公开/授权文献
信息查询
IPC分类:
