Invention Grant
- Patent Title: Micro fluxgate sensor and method of manufacturing the same
- Patent Title (中): 微型磁通门传感器及其制造方法
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Application No.: US10859591Application Date: 2004-06-03
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Publication No.: US07382123B2Publication Date: 2008-06-03
- Inventor: Kyung-won Na , Sang-on Choi , Hae-seok Park , Dong-sik Shim
- Applicant: Kyung-won Na , Sang-on Choi , Hae-seok Park , Dong-sik Shim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2003-0036130 20030604
- Main IPC: G01R33/04
- IPC: G01R33/04 ; G01R33/02

Abstract:
A micro-machining method of manufacturing a micro fluxgate sensor manufactured having an amorphous magnetic core includes forming lower coils of an excitation coil and a magnetic field detecting coil on a wafer, depositing a first insulating layer on the lower coils and forming an amorphous magnetic core, depositing a second insulating layer on the amorphous magnetic core and forming upper coils connected to the lower coils to complete the excitation coil and the magnetic field detecting coil, and covering the excitation coil and the magnetic field detecting coil with a protective film, and etching the protective film to expose a portion of the excitation coil and magnetic field detecting coil, thereby forming a pad.
Public/Granted literature
- US20050024050A1 Micro fluxgate sensor and method of manufacturing the same Public/Granted day:2005-02-03
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