Invention Grant
- Patent Title: Thin film transistor with a passivation layer
- Patent Title (中): 具有钝化层的薄膜晶体管
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Application No.: US10964062Application Date: 2004-10-12
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Publication No.: US07382421B2Publication Date: 2008-06-03
- Inventor: Randy Hoffman , John Wager , David Hong , Hai Chiang
- Applicant: Randy Hoffman , John Wager , David Hong , Hai Chiang
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/136
Abstract:
Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.
Public/Granted literature
- US20060079034A1 Method to form a passivation layer Public/Granted day:2006-04-13
Information query
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